All MOSFET. BSR606N Datasheet

 

BSR606N Datasheet and Replacement


   Type Designator: BSR606N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.6 nS
   Cossⓘ - Output Capacitance: 131 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT-23
 

 BSR606N substitution

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BSR606N Datasheet (PDF)

 ..1. Size:368K  infineon
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BSR606N

BSR606NOptiMOS-3 Small-Signal-TransistorProduct Summary FeaturesVDS 60 V N-channelRDS(on),max VGS=10 V 60 mW Enhancement modeVGS=4.5 V 90 Logic level (4.5V rated)ID 2.3 A Avalanche rated Qualified according to AEC Q101PG-SC59 100%lead-free; Halogen-free; RoHS compliant3 1 2 Type Package Tape and Reel Information Marking Halogen- Pa

Datasheet: BSP324 , BSP372 , BSP372N , BSP373 , BSP373N , BSP716N , BSP88 , BSP89L6327 , IRF830 , BSS119L6327 , BSS119N , BSS123D87Z , BSS123-7 , BSS123-7-F , BSS123L6327 , BSS123L6433 , BSS123N .

History: CSD87335Q3D | SWF630 | RU30120L | WMM25N70EM | TPY70R1K5MB

Keywords - BSR606N MOSFET datasheet

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