All MOSFET. BSR606N Datasheet

 

BSR606N Datasheet and Replacement


   Type Designator: BSR606N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 2.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 2.6 nS
   Cossⓘ - Output Capacitance: 131 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT-23
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BSR606N Datasheet (PDF)

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BSR606N

BSR606NOptiMOS-3 Small-Signal-TransistorProduct Summary FeaturesVDS 60 V N-channelRDS(on),max VGS=10 V 60 mW Enhancement modeVGS=4.5 V 90 Logic level (4.5V rated)ID 2.3 A Avalanche rated Qualified according to AEC Q101PG-SC59 100%lead-free; Halogen-free; RoHS compliant3 1 2 Type Package Tape and Reel Information Marking Halogen- Pa

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: 2SK1571 | R6015ANZ

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