BSR606N PDF and Equivalents Search

 

BSR606N Specs and Replacement

Type Designator: BSR606N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.6 nS

Cossⓘ - Output Capacitance: 131 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOT-23

BSR606N substitution

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BSR606N datasheet

 ..1. Size:368K  infineon
 bsr606n.pdf pdf_icon

BSR606N

BSR606N OptiMOS -3 Small-Signal-Transistor Product Summary Features VDS 60 V N-channel RDS(on),max VGS=10 V 60 mW Enhancement mode VGS=4.5 V 90 Logic level (4.5V rated) ID 2.3 A Avalanche rated Qualified according to AEC Q101 PG-SC59 100%lead-free; Halogen-free; RoHS compliant 3 1 2 Type Package Tape and Reel Information Marking Halogen- Pa... See More ⇒

Detailed specifications: BSP324, BSP372, BSP372N, BSP373, BSP373N, BSP716N, BSP88, BSP89L6327, 2N60, BSS119L6327, BSS119N, BSS123D87Z, BSS123-7, BSS123-7-F, BSS123L6327, BSS123L6433, BSS123N

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