BSS159N MOSFET Datasheet: N-Ch, 60V, 0.23A. Full specification with pinout and replacement list

BSS159N Specs and Replacement

Type Designator: BSS159N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.9 nS

Cossⓘ - Output Capacitance: 8.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm

Package: SOT-23

BSS159N substitution

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BSS159N datasheet

..1. Size:306K infineon
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BSS159N SIPMOS Small-Signal-Transistor Product Summary Features V 60 V DS N-channel R 8 DS(on),max Depletion mode I 0.13 A DSS,min dv /dt rated Available with V indicator on reel GS(th) Pb-free lead-plating; RoHS compliant SOT-23 Type Package Pb-free Tape and Reel Information Marking BSS159 PG-SOT-23 Yes L6327 3000 pcs/reel SGs BSS159 PG-SOT-23 Yes... See More ⇒

8.1. Size:33K infineon
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Preliminary Data BSS 159 SIPMOS Small-Signal Transistor N channel Depletion mode High dynamic resistance Pin 1 Pin 2 Pin 3 G S D Type VDS ID RDS(on) Package Marking Ordering Code BSS 159 50 V 0.16 A 8 SOT-23 SEs Q67000-S321 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 50 V V Drain-gate voltage DGR RGS = 20 k 50 Gate source voltage ... See More ⇒

Detailed specifications: BSS138-G, BSS138LT1G, BSS138LT3, BSS138LT3G, BSS138N, BSS138TA, BSS138TC, BSS139, IRF740, BSS169, BSS214NW, BSS225, BSS606N, BSS670S2L, BSS7728N, BSS7728NG, BSS806NE