All MOSFET. BSS159N Datasheet

 

BSS159N Datasheet and Replacement


   Type Designator: BSS159N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.23 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.9 nS
   Cossⓘ - Output Capacitance: 8.3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
   Package: SOT-23
 

 BSS159N substitution

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BSS159N Datasheet (PDF)

 ..1. Size:306K  infineon
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BSS159N

BSS159NSIPMOS Small-Signal-TransistorProduct SummaryFeaturesV 60 VDS N-channelR 8DS(on),max Depletion modeI 0.13 ADSS,min dv /dt rated Available with V indicator on reelGS(th) Pb-free lead-plating; RoHS compliantSOT-23Type Package Pb-free Tape and Reel Information MarkingBSS159 PG-SOT-23 Yes L6327: 3000 pcs/reel SGsBSS159 PG-SOT-23 Yes

 8.1. Size:33K  infineon
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BSS159N

Preliminary DataBSS 159SIPMOS Small-Signal Transistor N channel Depletion mode High dynamic resistancePin 1 Pin 2 Pin 3G S DType VDS ID RDS(on) Package Marking Ordering CodeBSS 159 50 V 0.16 A 8 SOT-23 SEs Q67000-S321Maximum RatingsParameter Symbol Values UnitDrain source voltage VDS 50 VVDrain-gate voltageDGRRGS = 20 k 50Gate source voltage

Datasheet: BSS138-G , BSS138LT1G , BSS138LT3 , BSS138LT3G , BSS138N , BSS138TA , BSS138TC , BSS139 , IRF740 , BSS169 , BSS214NW , BSS225 , BSS606N , BSS670S2L , BSS7728N , BSS7728NG , BSS806NE .

History: IXFV18N60P

Keywords - BSS159N MOSFET datasheet

 BSS159N cross reference
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