All MOSFET. BSS214NW Datasheet

 

BSS214NW Datasheet and Replacement


   Type Designator: BSS214NW
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 1.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7.8 nS
   Cossⓘ - Output Capacitance: 46 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: SOT-323
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BSS214NW Datasheet (PDF)

 ..1. Size:187K  infineon
 bss214nw.pdf pdf_icon

BSS214NW

BSS214NWOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 20 VDS N-channelR V =4.5 V 140mDS(on),max GS Enhancement modeV =2.5 V 250GS Super Logic level (2.5V rated)I 1.5 AD Avalanche rated Qualified according to AEC Q101PG-SOT323 100% lead-free; RoHS compliant3 Halogen-free according to IEC61249-2-2112Type Package

 7.1. Size:224K  infineon
 bss214n.pdf pdf_icon

BSS214NW

BSS214NOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 20 VDS N-channelR V =4.5 V 140mDS(on),max GS Enhancement modeV =2.5 V 250GS Super Logic level (2.5V rated)I 1.5 AD Avalanche rated Qualified according to AEC Q101PG-SOT23 100% lead-free; RoHS compliant3 Halogen-free according to IEC61249-2-2112Type Package Ta

 7.2. Size:125K  tysemi
 bss214n.pdf pdf_icon

BSS214NW

Product specificationBSS214NOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 20 VDS N-channelR V =4.5 V 140mDS(on),max GS Enhancement modeV =2.5 V 250GS Super Logic level (2.5V rated)I 1.5 AD Avalanche rated Qualified according to AEC Q101PG-SOT23 100% lead-free; RoHS compliant3 Halogen-free according to IEC61249-2-21

 9.1. Size:564K  infineon
 bss215p.pdf pdf_icon

BSS214NW

BSS215P#

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History: NCE0140IA | 2SK3901-ZK | STK801 | MEE4292-G | 2SK113Y | IPG16N10S4-61A | LSE50R160HT

Keywords - BSS214NW MOSFET datasheet

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