BSS214NW Datasheet and Replacement
Type Designator: BSS214NW
Marking Code: X5s
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 0.8 nC
tr ⓘ - Rise Time: 7.8 nS
Cossⓘ - Output Capacitance: 46 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: SOT-323
BSS214NW substitution
BSS214NW Datasheet (PDF)
bss214nw.pdf

BSS214NWOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 20 VDS N-channelR V =4.5 V 140mDS(on),max GS Enhancement modeV =2.5 V 250GS Super Logic level (2.5V rated)I 1.5 AD Avalanche rated Qualified according to AEC Q101PG-SOT323 100% lead-free; RoHS compliant3 Halogen-free according to IEC61249-2-2112Type Package
bss214n.pdf

BSS214NOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 20 VDS N-channelR V =4.5 V 140mDS(on),max GS Enhancement modeV =2.5 V 250GS Super Logic level (2.5V rated)I 1.5 AD Avalanche rated Qualified according to AEC Q101PG-SOT23 100% lead-free; RoHS compliant3 Halogen-free according to IEC61249-2-2112Type Package Ta
bss214n.pdf

Product specificationBSS214NOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 20 VDS N-channelR V =4.5 V 140mDS(on),max GS Enhancement modeV =2.5 V 250GS Super Logic level (2.5V rated)I 1.5 AD Avalanche rated Qualified according to AEC Q101PG-SOT23 100% lead-free; RoHS compliant3 Halogen-free according to IEC61249-2-21
Datasheet: BSS138LT3 , BSS138LT3G , BSS138N , BSS138TA , BSS138TC , BSS139 , BSS159N , BSS169 , 20N60 , BSS225 , BSS606N , BSS670S2L , BSS7728N , BSS7728NG , BSS806NE , BSS816NW , BSS84-7 .
Keywords - BSS214NW MOSFET datasheet
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