BSS225
MOSFET. Datasheet pdf. Equivalent
Type Designator: BSS225
Marking Code: KD
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 0.09
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 3.9
nC
trⓘ - Rise Time: 38
nS
Cossⓘ -
Output Capacitance: 7.6
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 45
Ohm
Package:
SOT-89
BSS225
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSS225
Datasheet (PDF)
..1. Size:295K infineon
bss225.pdf
TypeBSS225SIPMOS Small-Signal-TransistorProduct SummaryFeature 1)600 VVDS n-channelR 45DS(on),max enhancement modeI 0.09 AD Logic level dv /dt rated Qualified according to AEC Q101SOT89Type Package Pb-free Tape and Reel Information MarkingBSS225 SOT89 Yes L6327: 3000PCS/reel KDMaximum ratings, at T =25 C, unless otherwise specifie
9.1. Size:110K infineon
bss223pw.pdf
BSS 223PWOptiMOS-P Small-Signal-TransistorProduct SummaryFeatureVDS -20 V P-ChannelRDS(on) 1.2 Enhancement modeID -0.39 A Super Logic Level (2.5 V rated)PG-SOT-323 150C operating temperature3 Avalanche rated dv/dt rated21VSO05561 Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21Drainpin
9.2. Size:318K infineon
bss229.pdf
BSS 229SIPMOS Small-Signal Transistor VDS 250 V ID 0.07 A RDS(on) 100 N channel Depletion mode High dynamic resistance32 Available grouped in VGS(th)1Type Ordering Tape and Reel Pin Configuration Marking PackageCode Information1 2 3BSS 229 Q62702-S600 E6296: 1500 pcs/reel; G D S SS229 TO-922 reels/carton; source firstMaximum RatingsParameter Symbol Va
Datasheet: FQT7N10L
, FDP083N15A
, FQU10N20C
, FDP075N15A
, FQU11P06
, FQU12N20
, FDPF085N10A
, FQU13N06L
, IRFZ44
, FDB86102LZ
, FQU17P06
, FQU1N60C
, FDP085N10A
, FQU20N06L
, FQU2N100
, FQU2N60C
, FDMC8030
.