BSZ110N08NS5 Datasheet and Replacement
Type Designator: BSZ110N08NS5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: TSDSON-8FL
BSZ110N08NS5 substitution
BSZ110N08NS5 Datasheet (PDF)
bsz110n08ns5.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 80 VBSZ110N08NS5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 80 VBSZ110N08NS5TSDSON-8 FL1 Description(enlarged source interconnection)Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC conv
bsz110n06ns3 bsz110n06ns3g.pdf
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Datasheet: BSZ0901NS , BSZ0901NSI , BSZ0902NS , BSZ0902NSI , BSZ0904NSI , BSZ0907ND , BSZ0908ND , BSZ097N10NS5 , RFP50N06 , BSZ150N10LS3G , BSZ15DC02KD , BTS140A , BTS244Z , BTS282Z , BTS282ZE , 10N12 , 10N45 .
Keywords - BSZ110N08NS5 MOSFET datasheet
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History: WM03DN85A | SQJ964EP
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