All MOSFET. BSZ110N08NS5 Datasheet

 

BSZ110N08NS5 MOSFET. Datasheet pdf. Equivalent


   Type Designator: BSZ110N08NS5
   Marking Code: 110N08N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.8 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TSDSON-8FL

 BSZ110N08NS5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BSZ110N08NS5 Datasheet (PDF)

 ..1. Size:1359K  infineon
 bsz110n08ns5.pdf

BSZ110N08NS5 BSZ110N08NS5

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 80 VBSZ110N08NS5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 80 VBSZ110N08NS5TSDSON-8 FL1 Description(enlarged source interconnection)Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC conv

 6.1. Size:459K  infineon
 bsz110n06ns3 bsz110n06ns3g.pdf

BSZ110N08NS5 BSZ110N08NS5

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: APM9938K | 2SK3982-01MR

 

 
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