12N18 Datasheet and Replacement
Type Designator: 12N18
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 180 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 130 nS
Cossⓘ - Output Capacitance: 600 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: TO-3 TO-220
12N18 substitution
12N18 Datasheet (PDF)
..1. Size:261K inchange semiconductor
12n18.pdf
12n18.pdf
isc N-Channel MOSFET Transistor 12N18FEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 180V(Min)DSSStatic Drain-Source On-Resistance: R = 0.25(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch mode power supply.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
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