2SJ374 MOSFET Datasheet: P-Ch, 60V, 20A. Full specification with pinout and replacement list

2SJ374 Specs and Replacement

Type Designator: 2SJ374

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

ton ⓘ - Turn-on Time: 160 nS

Cossⓘ - Output Capacitance: 1050 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: TO-220F

2SJ374 substitution

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2SJ374 datasheet

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isc P-Channel MOSFET Transistor 2SJ374 DESCRIPTION Low Drain-Source ON Resistance High Forward Transfer Admittance Low Leakage Current Enhancement-Mode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed switching application Switching regulator ,DC-DC converter and Motor drive application ABSOLUTE MAXIMUM RATINGS(... See More ⇒

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2SJ378 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L - -MOSV) 2SJ378 Relay Drive, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.16 (typ.) DS (ON) High forward transfer admittance Y = 4.0 S (typ.) fs Low leakage current IDSS = -100 A (max) (V = -60 V) DS Enhancement-mo... See More ⇒

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2SJ377 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L - -MOSV) 2SJ377 Relay Drive, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.16 (typ.) DS (ON) High forward transfer admittance Y = 4.0 S (typ.) fs Low leakage current IDSS = -100 A (max) (V = -60 V) DS Enhancement-mo... See More ⇒