2SK1680 MOSFET Datasheet: N-Ch, 500V, 20A. Full specification with pinout and replacement list

2SK1680 Specs and Replacement

Type Designator: 2SK1680

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: TO-3PN

2SK1680 substitution

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2SK1680 datasheet

..1. Size:215K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK1680 DESCRIPTION Drain Current I =20A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high Current, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V DSS GS... See More ⇒

8.1. Size:43K hitachi
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2SK168 Silicon N-Channel Junction FET Application VHF Amplifier, Mixer, Local oscillator Outline TO-92 (2) 1. Gate 2. Source 3. Drain 3 2 1 2SK168 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Gate to drain voltage VGDO 30 V Gate to source voltage VGSS 1 V Gate current IG 10 mA Drain current ID 20 mA Channel power dissipation Pch 200 mW Channel temper... See More ⇒

8.2. Size:158K no
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