2SK1680 Datasheet and Replacement
Type Designator: 2SK1680
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: TO-3PN
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2SK1680 Datasheet (PDF)
2sk1680.pdf

isc N-Channel MOSFET Transistor 2SK1680DESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh Current, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 500 VDSS GS
2sk168.pdf

2SK168Silicon N-Channel Junction FETApplicationVHF Amplifier, Mixer, Local oscillatorOutlineTO-92 (2)1. Gate2. Source3. Drain3212SK168Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitGate to drain voltage VGDO 30 VGate to source voltage VGSS 1 VGate current IG 10 mADrain current ID 20 mAChannel power dissipation Pch 200 mWChannel temper
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: IRFP450A | FMM50-025TF | IRFP442
Keywords - 2SK1680 MOSFET datasheet
2SK1680 cross reference
2SK1680 equivalent finder
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History: IRFP450A | FMM50-025TF | IRFP442



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