2SK1819 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1819
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 80 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO-220F
2SK1819 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1819 Datasheet (PDF)
2sk1819.pdf
isc N-Channel MOSFET Transistor 2SK1819DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSChopper regulatorMotor driveInvertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V
2sk1813.pdf
Ordering number:EN4177N-Channel Silicon MOSFET2SK1813High-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2089 Converters.[2SK1813]10.24.51.31.20.80.41 2 31 : Gate2 : Drain3 : Source2.55 2.55SANYO : TO-220MFSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Co
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MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F