2SK1976 Datasheet and Replacement
Type Designator: 2SK1976
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 140 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
Package: TO-220F
2SK1976 substitution
2SK1976 Datasheet (PDF)
2sk1976.pdf

isc N-Channel MOSFET Transistor 2SK1976DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh Breakdown VoltageABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 V
2sk1971.pdf

2SK1971 Silicon N Channel MOS FET REJ03G0990-0200 (Previous: ADE-208-1338) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter, motor control Outline RENESAS Package code: PRSS0004ZF-A(Package name
Datasheet: 2SK1936 , 2SK1937 , 2SK1938 , 2SK1939 , 2SK1940 , 2SK1941 , 2SK1942 , 2SK1974 , IRF1010E , 2SK1981 , 2SK1982 , 2SK1983 , 2SK1984 , 2SK1985 , 2SK2002-01M , 2SK2003-01M , 2SK2019-01 .
History: IXFT12N90Q | IXTH6N150 | ELM14430AA | RJK0629DPE | PMPB20EN | NCE65T180D | AM2322N
Keywords - 2SK1976 MOSFET datasheet
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History: IXFT12N90Q | IXTH6N150 | ELM14430AA | RJK0629DPE | PMPB20EN | NCE65T180D | AM2322N



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