2SK1976 Specs and Replacement
Type Designator: 2SK1976
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 140 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
Package: TO-220F
2SK1976 substitution
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2SK1976 datasheet
2sk1976.pdf
isc N-Channel MOSFET Transistor 2SK1976 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High Breakdown Voltage ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V ... See More ⇒
2sk1971.pdf
2SK1971 Silicon N Channel MOS FET REJ03G0990-0200 (Previous ADE-208-1338) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter, motor control Outline RENESAS Package code PRSS0004ZF-A (Package name... See More ⇒
Detailed specifications: 2SK1936, 2SK1937, 2SK1938, 2SK1939, 2SK1940, 2SK1941, 2SK1942, 2SK1974, IRF9540N, 2SK1981, 2SK1982, 2SK1983, 2SK1984, 2SK1985, 2SK2002-01M, 2SK2003-01M, 2SK2019-01
Keywords - 2SK1976 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: IRLML2803GPBF | SFS06R10DF
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