All MOSFET. SUB45N05-20L Datasheet

 

SUB45N05-20L MOSFET. Datasheet pdf. Equivalent


   Type Designator: SUB45N05-20L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 93 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 43 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO263

 SUB45N05-20L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SUB45N05-20L Datasheet (PDF)

 ..1. Size:41K  vishay
 sub45n05-20l sup45n05-20l.pdf

SUB45N05-20L SUB45N05-20L

SUP/SUB45N05-20LVishay SiliconixN-Channel 50-V (D-S), 175_C MOSFET, Logic LevelPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.018 @ VGS = 10 V50 "45 a"0.020 @ VGS = 4.5 VDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB45N05-20LTop ViewN-Channel MOSFETSUP45N05-20LABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol

 7.1. Size:66K  vishay
 sub45n03-13l.pdf

SUB45N05-20L SUB45N05-20L

SUB45N03-13LVishay SiliconixN-Channel 30-V (D-S), 175_C MOSFETFEATURESPRODUCT SUMMARY D TrenchFETr Power MOSFETSD 175_C Junction TemperatureV(BR)DSS (V) rDS(on) (W) ID (A)0.013 @ VGS = 10 V 45a30300.02 @ VGS = 4.5 V 45aDTO-263GG D STop ViewSSUB45N03-13LN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit Unit

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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