All MOSFET. RFM4N35 Datasheet

 

RFM4N35 MOSFET. Datasheet pdf. Equivalent


   Type Designator: RFM4N35
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 75 W
   Maximum Drain-Source Voltage |Vds|: 350 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 4 A
   Maximum Junction Temperature (Tj): 150 °C
   Rise Time (tr): 42 nS
   Drain-Source Capacitance (Cd): 150 pF
   Maximum Drain-Source On-State Resistance (Rds): 2 Ohm
   Package: TO3

 RFM4N35 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RFM4N35 Datasheet (PDF)

 ..1. Size:42K  harris semi
 rfm4n35 rfm4n40 rfp4n35 rfp4n40.pdf

RFM4N35 RFM4N35

RFM4N35, RFM4N40, RFP4N35, RFP4N40SemiconductorData Sheet October 1998 File Number 1491.34A, 350V and 400V, 2.000 Ohm, N-Channel FeaturesPower MOSFETs 4A, 350V and 400V[ /Title[ /TitleThese are N-channel enhancement-mode silicon-gate rDS(ON) = 2.000(RFM4N()power field effect transistors designed for applications such35, Related Literature/Sub- as switchi

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SWP046R68E8T

 

 
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