All MOSFET. RFM4N35 Datasheet

 

RFM4N35 Datasheet and Replacement


   Type Designator: RFM4N35
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 350 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO3
 

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RFM4N35 Datasheet (PDF)

 ..1. Size:42K  harris semi
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RFM4N35

RFM4N35, RFM4N40, RFP4N35, RFP4N40SemiconductorData Sheet October 1998 File Number 1491.34A, 350V and 400V, 2.000 Ohm, N-Channel FeaturesPower MOSFETs 4A, 350V and 400V[ /Title[ /TitleThese are N-channel enhancement-mode silicon-gate rDS(ON) = 2.000(RFM4N()power field effect transistors designed for applications such35, Related Literature/Sub- as switchi

Datasheet: 3N55 , 3N75 , 40N05 , 40N06 , SUB45N05-20L , SUP45N05-20L , 45N06 , 45N20 , RU7088R , RFM4N40 , 4N60AS , 50N06FI , 5NA80 , 60N06-14 , 75N05E , 8N90A , 9N80A .

History: STD1NK60-1 | SSF4004 | R8010ANX | XP152A11E5MR-G | S85N042RP | AOB11S60L | AP2344GEN-HF

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