RFM4N35 PDF and Equivalents Search

 

RFM4N35 Specs and Replacement

Type Designator: RFM4N35

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 350 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 42 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO3

RFM4N35 substitution

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RFM4N35 datasheet

 ..1. Size:42K  harris semi
 rfm4n35 rfm4n40 rfp4n35 rfp4n40.pdf pdf_icon

RFM4N35

RFM4N35, RFM4N40, RFP4N35, RFP4N40 Semiconductor Data Sheet October 1998 File Number 1491.3 4A, 350V and 400V, 2.000 Ohm, N-Channel Features Power MOSFETs 4A, 350V and 400V [ /Title [ /Title These are N-channel enhancement-mode silicon-gate rDS(ON) = 2.000 (RFM4N () power field effect transistors designed for applications such 35, Related Literature /Sub- as switchi... See More ⇒

Detailed specifications: 3N55, 3N75, 40N05, 40N06, SUB45N05-20L, SUP45N05-20L, 45N06, 45N20, IRFZ46N, RFM4N40, 4N60AS, 50N06FI, 5NA80, 60N06-14, 75N05E, 8N90A, 9N80A

Keywords - RFM4N35 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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