5NA80
MOSFET. Datasheet pdf. Equivalent
Type Designator: 5NA80
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.75
V
|Id|ⓘ - Maximum Drain Current: 4.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 55
nC
trⓘ - Rise Time: 100
nS
Cossⓘ -
Output Capacitance: 140
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.4
Ohm
Package:
TO220
5NA80
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
5NA80
Datasheet (PDF)
..1. Size:214K inchange semiconductor
5na80.pdf 
isc N-Channel MOSFET Transistor 5NA80DESCRIPTIONDrain Current I = 4.7A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current ,high speed switchingSwitch mode power suppliesDC-AC converters for welding equipment and uninterruptiblepow
0.1. Size:131K st
stb5na80.pdf
STB5NA80N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTB5NA80 800 V
0.2. Size:393K st
stp5na80.pdf
STP5NA80STP5NA80FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP5NA80 800 V
0.4. Size:96K st
stp5na80fp.pdf
STP5NA80FPN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE VDSS RDS(on) IDSTP5NA80FP 800 V
0.5. Size:50K st
stp5na80--.pdf
STP5NA80FPN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE VDSS RDS(on) IDSTP5NA80FP 800 V
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.
