60N06-14 MOSFET Datasheet: N-Ch, 60V, 60A. Full specification with pinout and replacement list

60N06-14 Specs and Replacement

Type Designator: 60N06-14

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 180 nS

Cossⓘ - Output Capacitance: 950 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: TO220

60N06-14 substitution

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60N06-14 datasheet

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isc N-Channel MOSFET Transistor 60N06-14 DESCRIPTION High current capability Avalanche rugged technology Low gate charge Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Regulator High current,high speed switching Solenoid and relay drivers ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL ARAMETER V... See More ⇒

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stp60n05-14 stp60n06-14.pdf pdf_icon

STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STP60N05-14 50 V ... See More ⇒

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STB60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STB60N06-14 60 V ... See More ⇒

0.3. Size:867K cn vbsemi
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STB60N06-14 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 60 60 0.013 at VGS = 4.5 V 50 D D2PAK (TO-263) G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit VGS Gate-Sou... See More ⇒