60N06-14 - описание и поиск аналогов

isc N-Channel MOSFET Transistor 60N06-14 DESCRIPTION High current capability Avalanche rugged technology Low gate charge Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Regulator High current,high speed switching Solenoid and relay drivers ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL ARAMETER V

STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STP60N05-14 50 V

STB60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STB60N06-14 60 V

STB60N06-14 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 60 60 0.013 at VGS = 4.5 V 50 D D2PAK (TO-263) G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit VGS Gate-Sou

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP60N06-14 FEATURES With low gate drive requirements Easy to drive High current capability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Solenold and relay dirvers DC-DC converters Automotive environment ABSOLUTE MAXIMUM RATINGS(T =25