BUZ14 PDF and Equivalents Search

 

BUZ14 Specs and Replacement

Type Designator: BUZ14

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 39 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 110 nS

Cossⓘ - Output Capacitance: 1300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TO-3

BUZ14 substitution

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BUZ14 datasheet

 ..1. Size:174K  siemens
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BUZ14

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 ..2. Size:223K  inchange semiconductor
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BUZ14

isc N-Channel Mosfet Transistor BUZ14 FEATURES Static Drain-Source On-Resistance R = 0.04 (Max) DS(on) SOA is Power Dissipation Limited High input impedance High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,rela... See More ⇒

Detailed specifications: BUK454-200B, BUK455-60A, BUK455-60B, BUK445-60A, BUK456-60A, BUK456-60B, 9N90L-TF1, BUK444-200B, IRFB4110, BUZ15, BUZ205, BUZ211, BUZ330, IRFAC32, JCS24N50WH, JCS24N50ABH, RU6888R3

Keywords - BUZ14 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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