BUZ14 Specs and Replacement
Type Designator: BUZ14
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 39 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 1300 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO-3
BUZ14 substitution
- MOSFET ⓘ Cross-Reference Search
BUZ14 datasheet
buz14.pdf
isc N-Channel Mosfet Transistor BUZ14 FEATURES Static Drain-Source On-Resistance R = 0.04 (Max) DS(on) SOA is Power Dissipation Limited High input impedance High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,rela... See More ⇒
Detailed specifications: BUK454-200B, BUK455-60A, BUK455-60B, BUK445-60A, BUK456-60A, BUK456-60B, 9N90L-TF1, BUK444-200B, IRFB4110, BUZ15, BUZ205, BUZ211, BUZ330, IRFAC32, JCS24N50WH, JCS24N50ABH, RU6888R3
Keywords - BUZ14 MOSFET specs
BUZ14 cross reference
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BUZ14 substitution
BUZ14 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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