BUZ15 Datasheet and Replacement
Type Designator: BUZ15
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 85 nS
Cossⓘ - Output Capacitance: 800 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO-3
BUZ15 substitution
BUZ15 Datasheet (PDF)
buz15.pdf

isc N-Channel Mosfet Transistor BUZ15FEATURESStatic Drain-Source On-Resistance: R = 0.03(Max)DS(on)SOA is Power Dissipation LimitedHigh input impedanceHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators,switching converters, motor drivers,rela
Datasheet: BUK455-60A , BUK455-60B , BUK445-60A , BUK456-60A , BUK456-60B , 9N90L-TF1 , BUK444-200B , BUZ14 , IRF630 , BUZ205 , BUZ211 , BUZ330 , IRFAC32 , JCS24N50WH , JCS24N50ABH , RU6888R3 , SPP77N06S2-12 .
History: BUZ211 | MS14N60 | JCS24N50ABH | SPP77N06S2-12 | SI3812DV | BRA4N65 | SJMN600R65CF
Keywords - BUZ15 MOSFET datasheet
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History: BUZ211 | MS14N60 | JCS24N50ABH | SPP77N06S2-12 | SI3812DV | BRA4N65 | SJMN600R65CF



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