JCS24N50ABH Specs and Replacement
Type Designator: JCS24N50ABH
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 271 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 107 nS
Cossⓘ - Output Capacitance: 465 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO3PB
JCS24N50ABH substitution
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JCS24N50ABH datasheet
jcs24n50wh jcs24n50abh.pdf
N N- CHANNEL MOSFET R JCS24N50H MAIN CHARACTERISTICS Package ID 24 A VDSS 500 V Rdson-max 0.19 @Vgs=10V Qg-typ 81nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge ... See More ⇒
Detailed specifications: BUK444-200B, BUZ14, BUZ15, BUZ205, BUZ211, BUZ330, IRFAC32, JCS24N50WH, AON6414A, RU6888R3, SPP77N06S2-12, SPB77N06S2-12, TSA20N50M, M7002NND03, M7002TTD03, MC3406, MC3541
Keywords - JCS24N50ABH MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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