SPB77N06S2-12 PDF and Equivalents Search

 

SPB77N06S2-12 Specs and Replacement

Type Designator: SPB77N06S2-12

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 158 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 460 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO263

SPB77N06S2-12 substitution

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SPB77N06S2-12 datasheet

 ..1. Size:311K  infineon
 spp77n06s2-12 spb77n06s2-12.pdf pdf_icon

SPB77N06S2-12

SPP77N06S2-12 SPB77N06S2-12 OptiMOS Power-Transistor Product Summary Feature VDS 55 V N-Channel RDS(on) 12 m Enhancement mode ID 80 A 175 C operating temperature P- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP77N06S2-12 P- TO220 -3-1 Q67060-S6029 2N0612 SPB77N06S2-12 P- TO263 -3-2 Q67060-S6030 2N0612 Ma... See More ⇒

Detailed specifications: BUZ205, BUZ211, BUZ330, IRFAC32, JCS24N50WH, JCS24N50ABH, RU6888R3, SPP77N06S2-12, P55NF06, TSA20N50M, M7002NND03, M7002TTD03, MC3406, MC3541, MCD04N60, MCD04N65, MCD3410

Keywords - SPB77N06S2-12 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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