SPB77N06S2-12 MOSFET. Datasheet pdf. Equivalent
Type Designator: SPB77N06S2-12
Marking Code: 2N0612
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 158 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 45 nC
trⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 460 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO263
SPB77N06S2-12 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPB77N06S2-12 Datasheet (PDF)
..1. Size:311K infineon
spp77n06s2-12 spb77n06s2-12.pdf
spp77n06s2-12 spb77n06s2-12.pdf
SPP77N06S2-12SPB77N06S2-12OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) 12 m Enhancement modeID 80 A 175C operating temperatureP- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP77N06S2-12 P- TO220 -3-1 Q67060-S60292N0612SPB77N06S2-12 P- TO263 -3-2 Q67060-S6030 2N0612Ma
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
