All MOSFET. SPB77N06S2-12 Datasheet

 

SPB77N06S2-12 Datasheet and Replacement


   Type Designator: SPB77N06S2-12
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 158 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO263
 

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SPB77N06S2-12 Datasheet (PDF)

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SPB77N06S2-12

SPP77N06S2-12SPB77N06S2-12OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) 12 m Enhancement modeID 80 A 175C operating temperatureP- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP77N06S2-12 P- TO220 -3-1 Q67060-S60292N0612SPB77N06S2-12 P- TO263 -3-2 Q67060-S6030 2N0612Ma

Datasheet: BUZ205 , BUZ211 , BUZ330 , IRFAC32 , JCS24N50WH , JCS24N50ABH , RU6888R3 , SPP77N06S2-12 , IRFB4115 , TSA20N50M , M7002NND03 , M7002TTD03 , MC3406 , MC3541 , MCD04N60 , MCD04N65 , MCD3410 .

History: BUK456-60B | SJMN600R65CF | JCS24N50ABH | SI1900DL | SI3812DV | BRA4N65 | STW70N65M2

Keywords - SPB77N06S2-12 MOSFET datasheet

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