All MOSFET. MS13N50 Datasheet

 

MS13N50 Datasheet and Replacement


   Type Designator: MS13N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 195 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
   Package: TO-220
 

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MS13N50 Datasheet (PDF)

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MS13N50

MS13N50 500V N-Channel MOSFET Description The MS13N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Intrinsic

 9.1. Size:565K  way-on
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MS13N50

WMS13N03T1 30V N-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS13N03T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and Syet maintain superior switching performance. SSGFeatures SOP-8L V = 30V, I = 13A DS DR

Datasheet: MCD04N60 , MCD04N65 , MCD3410 , MS10N60 , MS10N65 , MS10N80 , MS12N60 , MS12N65 , 12N60 , MS13P21 , MS14N60 , MS14P21 , MS15N50 , MS15N60 , MS17N03Q8 , MS18N50 , MS20N04NE .

History: IXTN120P20T

Keywords - MS13N50 MOSFET datasheet

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