All MOSFET. MS13P21 Datasheet

 

MS13P21 Datasheet and Replacement


   Type Designator: MS13P21
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 2.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 9 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.079 Ohm
   Package: SC-70
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MS13P21 Datasheet (PDF)

 ..1. Size:470K  bruckewell
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MS13P21

MS13P21P-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.079 @ VGS = -4.5V -2.1-20battery-powered products such as com

 9.1. Size:759K  way-on
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MS13P21

WMS13P04T1 40V P-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS13P04T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSFeatures GSOP-8L V = - 40V, I = - 13A DS DR

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History: IXKK85N60C | MC08N005C | IRLR024 | CED05N8 | HMS80N10D | AON6794 | BL10N70-A

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