MS13P21 Datasheet and Replacement
Type Designator: MS13P21
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 2.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.079 Ohm
Package: SC-70
MS13P21 substitution
MS13P21 Datasheet (PDF)
ms13p21.pdf

MS13P21P-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.079 @ VGS = -4.5V -2.1-20battery-powered products such as com
wms13p04t1.pdf

WMS13P04T1 40V P-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS13P04T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSFeatures GSOP-8L V = - 40V, I = - 13A DS DR
Datasheet: MCD04N65 , MCD3410 , MS10N60 , MS10N65 , MS10N80 , MS12N60 , MS12N65 , MS13N50 , 8205A , MS14N60 , MS14P21 , MS15N50 , MS15N60 , MS17N03Q8 , MS18N50 , MS20N04NE , MS20N06 .
History: ST3401SRG
Keywords - MS13P21 MOSFET datasheet
MS13P21 cross reference
MS13P21 equivalent finder
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MS13P21 replacement
History: ST3401SRG



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