MS13P21 Specs and Replacement
Type Designator: MS13P21
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 2.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.079 Ohm
Package: SC-70
MS13P21 substitution
- MOSFET ⓘ Cross-Reference Search
MS13P21 datasheet
ms13p21.pdf
MS13P21 P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.079 @ VGS = -4.5V -2.1 -20 battery-powered products such as com... See More ⇒
Detailed specifications: MCD04N65, MCD3410, MS10N60, MS10N65, MS10N80, MS12N60, MS12N65, MS13N50, IRFP260, MS14N60, MS14P21, MS15N50, MS15N60, MS17N03Q8, MS18N50, MS20N04NE, MS20N06
Keywords - MS13P21 MOSFET specs
MS13P21 cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
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