All MOSFET. MS14N60 Datasheet

 

MS14N60 Datasheet and Replacement


   Type Designator: MS14N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: TO-220
 

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MS14N60 Datasheet (PDF)

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MS14N60

MS14N60 900V N-Channel MOSFET Description The MS14N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requiremen

Datasheet: MCD3410 , MS10N60 , MS10N65 , MS10N80 , MS12N60 , MS12N65 , MS13N50 , MS13P21 , 2SK3568 , MS14P21 , MS15N50 , MS15N60 , MS17N03Q8 , MS18N50 , MS20N04NE , MS20N06 , MS23N22 .

History: BRA4N65

Keywords - MS14N60 MOSFET datasheet

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