All MOSFET. MS14P21 Datasheet

 

MS14P21 Datasheet and Replacement


   Type Designator: MS14P21
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 3.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.079 Ohm
   Package: SOT-363
 

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MS14P21 Datasheet (PDF)

 ..1. Size:241K  bruckewell
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MS14P21

MS14P21P-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETs utilize a VDS (V) rDS(on) (OHM) ID (A)high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat 0.079 @ VGS = -4.5V -3.7dissipation. Typical applications are DC-DC -20 0.110 @ VGS = -2.5V -3.1converters and power management in portable and battery

 9.1. Size:761K  way-on
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MS14P21

WMS14P03T1 30V P-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS14P03T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and Syet maintain superior switching performance. SSGFeatures SOP-8L V = -30V, I = -14A DS DR

Datasheet: MS10N60 , MS10N65 , MS10N80 , MS12N60 , MS12N65 , MS13N50 , MS13P21 , MS14N60 , AON7410 , MS15N50 , MS15N60 , MS17N03Q8 , MS18N50 , MS20N04NE , MS20N06 , MS23N22 , MS23N26 .

History: NCE0117I | PSMN7R5-30YLD | HCF70R360 | IRHM7150 | NTMFS5C609NLT1G | DMZ6005E | KP8M6

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