MS14P21 Specs and Replacement
Type Designator: MS14P21
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 3.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.079 Ohm
Package: SOT-363
MS14P21 substitution
- MOSFET ⓘ Cross-Reference Search
MS14P21 datasheet
ms14p21.pdf
MS14P21 P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY These miniature surface mount MOSFETs utilize a VDS (V) rDS(on) (OHM) ID (A) high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat 0.079 @ VGS = -4.5V -3.7 dissipation. Typical applications are DC-DC -20 0.110 @ VGS = -2.5V -3.1 converters and power management in portable and battery... See More ⇒
Detailed specifications: MS10N60, MS10N65, MS10N80, MS12N60, MS12N65, MS13N50, MS13P21, MS14N60, SPP20N60C3, MS15N50, MS15N60, MS17N03Q8, MS18N50, MS20N04NE, MS20N06, MS23N22, MS23N26
Keywords - MS14P21 MOSFET specs
MS14P21 cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: WMR07N06TS | 2SK1634
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