All MOSFET. MS17N03Q8 Datasheet

 

MS17N03Q8 Datasheet and Replacement


   Type Designator: MS17N03Q8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 116 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: SO-8
 

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MS17N03Q8 Datasheet (PDF)

 ..1. Size:645K  bruckewell
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MS17N03Q8

Preliminary Data Sheet Bruckewell Technology Corp., Ltd. MS17N03Q8 N-Channel Logic Level Enhancement Mode MOSFET MS17N03Q8 provides the designer with the best SO-8 Package combination of fast switching, ruggedized device design, ultra low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount application

 9.1. Size:1308K  cn hmsemi
 hms17n65 hms17n65f hms17n65d.pdf pdf_icon

MS17N03Q8

HMS17N65D, HMS17N65, HMS17N65FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 210 m gate charge. This super junction MOSFET fits the industrys ID 1 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power app

Datasheet: MS12N60 , MS12N65 , MS13N50 , MS13P21 , MS14N60 , MS14P21 , MS15N50 , MS15N60 , TK10A60D , MS18N50 , MS20N04NE , MS20N06 , MS23N22 , MS23N26 , MS23N36 , MS23P01 , MS23P21 .

History: TMPF8N60AZ

Keywords - MS17N03Q8 MOSFET datasheet

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