MS34N34 Datasheet and Replacement
Type Designator: MS34N34
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 24 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: TSOP-6
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MS34N34 Datasheet (PDF)
ms34n34.pdf

Bruckewell Technology Corp., Ltd. TSOP-6 Package MS34N34 Dual N-Channel 20-V (D-S) MOSFET Key Features: These miniature surface mount MOSFETs Utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are DC-DC converters, power management in portable an
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: AOD294A | SQD07N25-350H | CHM1710PAGP | BLM4435 | STP85NF55 | RFM15N12 | AP03N70H
Keywords - MS34N34 MOSFET datasheet
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History: AOD294A | SQD07N25-350H | CHM1710PAGP | BLM4435 | STP85NF55 | RFM15N12 | AP03N70H



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