All MOSFET. MS34N34 Datasheet

 

MS34N34 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MS34N34
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6 nC
   trⓘ - Rise Time: 24 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TSOP-6

 MS34N34 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MS34N34 Datasheet (PDF)

 ..1. Size:677K  bruckewell
 ms34n34.pdf

MS34N34 MS34N34

Bruckewell Technology Corp., Ltd. TSOP-6 Package MS34N34 Dual N-Channel 20-V (D-S) MOSFET Key Features: These miniature surface mount MOSFETs Utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are DC-DC converters, power management in portable an

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