All MOSFET. MS3N80 Datasheet

 

MS3N80 Datasheet and Replacement


   Type Designator: MS3N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
   Package: TO-220
 

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MS3N80 Datasheet (PDF)

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MS3N80

MS3N80 800V N-Channel MOSFET Description The M3N80 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications. Features RDS(on) (Max 2.4 )@VGS=10V Gate Charge (

Datasheet: MS23N22 , MS23N26 , MS23N36 , MS23P01 , MS23P21 , MS23P25 , MS23P39 , MS34N34 , IRF1407 , MS40N06 , MS44P15 , MS4541C , MS48P25 , MS49P63 , MS4N60 , MS4N60C , MS4N65 .

History: HM3P10MR

Keywords - MS3N80 MOSFET datasheet

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