All MOSFET. MS40N06 Datasheet

 

MS40N06 Datasheet and Replacement


   Type Designator: MS40N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 7.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 19.3 nC
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: DFN5X6
 

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MS40N06 Datasheet (PDF)

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MS40N06

MS40N06 60V N-Channel MOSFET GENERAL DESCRIPTION The MS40N06 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM6006M6 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. FEATURES Ad

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MS40N06

HMS40N10DN-Channel Super Trench Power MOSFET Description The HMS40N10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectifi

Datasheet: MS23N26 , MS23N36 , MS23P01 , MS23P21 , MS23P25 , MS23P39 , MS34N34 , MS3N80 , IRFZ24N , MS44P15 , MS4541C , MS48P25 , MS49P63 , MS4N60 , MS4N60C , MS4N65 , MS50N06 .

History: YJQ55P02A | APT50M50JLC | MTP2N35

Keywords - MS40N06 MOSFET datasheet

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