All MOSFET. MS44P15 Datasheet

 

MS44P15 Datasheet and Replacement


   Type Designator: MS44P15
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 13.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0084 Ohm
   Package: SOIC-8
 

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MS44P15 Datasheet (PDF)

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MS44P15

MS44P15 P-Channel MOSFET FEATURES These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, VDS RDS(ON) (mohm) ID (A) printers, PCMCIA cards, cellular and

Datasheet: MS23N36 , MS23P01 , MS23P21 , MS23P25 , MS23P39 , MS34N34 , MS3N80 , MS40N06 , P60NF06 , MS4541C , MS48P25 , MS49P63 , MS4N60 , MS4N60C , MS4N65 , MS50N06 , MS5N50 .

History: H8N65P | ME15N25-G

Keywords - MS44P15 MOSFET datasheet

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