MS44P15 Datasheet and Replacement
Type Designator: MS44P15
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 13.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 23 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0084 Ohm
Package: SOIC-8
MS44P15 substitution
MS44P15 Datasheet (PDF)
ms44p15.pdf

MS44P15 P-Channel MOSFET FEATURES These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, VDS RDS(ON) (mohm) ID (A) printers, PCMCIA cards, cellular and
Datasheet: MS23N36 , MS23P01 , MS23P21 , MS23P25 , MS23P39 , MS34N34 , MS3N80 , MS40N06 , IRFP450 , MS4541C , MS48P25 , MS49P63 , MS4N60 , MS4N60C , MS4N65 , MS50N06 , MS5N50 .
History: TPC8076 | KP727B | 2SK2190 | AF2301P | AP30T10GP-HF | HCFL60R115
Keywords - MS44P15 MOSFET datasheet
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History: TPC8076 | KP727B | 2SK2190 | AF2301P | AP30T10GP-HF | HCFL60R115



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