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MS44P15 Specs and Replacement

Type Designator: MS44P15

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 13.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0084 Ohm

Package: SOIC-8

MS44P15 substitution

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MS44P15 datasheet

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MS44P15

MS44P15 P-Channel MOSFET FEATURES These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, VDS RDS(ON) (mohm) ID (A) printers, PCMCIA cards, cellular and... See More ⇒

Detailed specifications: MS23N36, MS23P01, MS23P21, MS23P25, MS23P39, MS34N34, MS3N80, MS40N06, AO4407, MS4541C, MS48P25, MS49P63, MS4N60, MS4N60C, MS4N65, MS50N06, MS5N50

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