All MOSFET. MS48P25 Datasheet

 

MS48P25 Datasheet and Replacement


   Type Designator: MS48P25
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 11.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 48 nS
   Cossⓘ - Output Capacitance: 369 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: SO-8
 

 MS48P25 substitution

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MS48P25 Datasheet (PDF)

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MS48P25

MS48P25P-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technologyDS(on)13 @ VGS = -10V -11.5 Low thermal impedance-3019 @ VGS = -4.5V -9.3 Fast switching speedTypical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion CircuitsABSOLUTE MAXIMUM RATINGS (TA = 25

Datasheet: MS23P21 , MS23P25 , MS23P39 , MS34N34 , MS3N80 , MS40N06 , MS44P15 , MS4541C , 10N65 , MS49P63 , MS4N60 , MS4N60C , MS4N65 , MS50N06 , MS5N50 , MS5N50-A , MS5N60 .

History: FQD630TF

Keywords - MS48P25 MOSFET datasheet

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