All MOSFET. MS49P63 Datasheet

 

MS49P63 Datasheet and Replacement


   Type Designator: MS49P63
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SO-8
 

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MS49P63 Datasheet (PDF)

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MS49P63

MS49P63P-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)120 @ VGS = -10V -3.5 Low thermal impedance -60180 @ VGS = -4.5V -2.8 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RATINGS (

Datasheet: MS23P25 , MS23P39 , MS34N34 , MS3N80 , MS40N06 , MS44P15 , MS4541C , MS48P25 , STF13NM60N , MS4N60 , MS4N60C , MS4N65 , MS50N06 , MS5N50 , MS5N50-A , MS5N60 , MS60P02NE .

History: PSMN027-100BS

Keywords - MS49P63 MOSFET datasheet

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