MS5N50-A MOSFET Datasheet: N-Ch, 500V, 5A. Full specification with pinout and replacement list

MS5N50-A Specs and Replacement

Type Designator: MS5N50-A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 101 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 83 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm

Package: TO-220

MS5N50-A substitution

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MS5N50-A datasheet

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MS5N50-A N-Channel Enhancement Mode Power MOSFET Description The MS5N50-A is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features BVDSS=550V typically @ Tj=1... See More ⇒

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MS5N50 N-Channel Enhancement Mode Power MOSFET Description The MS5N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features BVDSS=550V typically @ Tj=150 ... See More ⇒

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AGMS5N50D General Description The AGMS5N50D combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 500V 1.4 5A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to minimiz... See More ⇒

Detailed specifications: MS4541C , MS48P25 , MS49P63 , MS4N60 , MS4N60C , MS4N65 , MS50N06 , MS5N50 , SI2302 , MS5N60 , MS60P02NE , MS69N68 , MS6N40 , MS6N80 , MS6N90 , MS6N95 , MS70N03 .