All MOSFET. MS5N50-A Datasheet

 

MS5N50-A Datasheet and Replacement


   Type Designator: MS5N50-A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 101 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 83 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: TO-220
 

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MS5N50-A Datasheet (PDF)

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MS5N50-A

MS5N50-A N-Channel Enhancement Mode Power MOSFET Description The MS5N50-A is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features BVDSS=550V typically @ Tj=1

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MS5N50-A

MS5N50 N-Channel Enhancement Mode Power MOSFET Description The MS5N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features BVDSS=550V typically @ Tj=150

Datasheet: MS4541C , MS48P25 , MS49P63 , MS4N60 , MS4N60C , MS4N65 , MS50N06 , MS5N50 , IRFZ46N , MS5N60 , MS60P02NE , MS69N68 , MS6N40 , MS6N80 , MS6N90 , MS6N95 , MS70N03 .

History: APQ4ESN50AB | IPP65R150CFDA | H5N5006LM | FQPF5N50CYDTU | KF5N50PZ

Keywords - MS5N50-A MOSFET datasheet

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