All MOSFET. MS5N50-A Datasheet

 

MS5N50-A Datasheet and Replacement


   Type Designator: MS5N50-A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 101 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 83 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: TO-220
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MS5N50-A Datasheet (PDF)

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MS5N50-A

MS5N50-A N-Channel Enhancement Mode Power MOSFET Description The MS5N50-A is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features BVDSS=550V typically @ Tj=1

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MS5N50-A

MS5N50 N-Channel Enhancement Mode Power MOSFET Description The MS5N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features BVDSS=550V typically @ Tj=150

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History: CHM85A3PAGP | TK7P65W | SFFX054Z

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