All MOSFET. MS5N60 Datasheet

 

MS5N60 Datasheet and Replacement


   Type Designator: MS5N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12.2 nS
   Cossⓘ - Output Capacitance: 86 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO-220
 

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MS5N60 Datasheet (PDF)

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MS5N60

MS5N60 N-Channel Enhancement Mode Power MOSFET Description The MS5N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features BVDSS=650V typically @ Tj=150

Datasheet: MS48P25 , MS49P63 , MS4N60 , MS4N60C , MS4N65 , MS50N06 , MS5N50 , MS5N50-A , AO3407 , MS60P02NE , MS69N68 , MS6N40 , MS6N80 , MS6N90 , MS6N95 , MS70N03 , MS74N52 .

History: 2SJ557A | IPAW70R600CE | AP70T03AS

Keywords - MS5N60 MOSFET datasheet

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