MS5N60 Specs and Replacement
Type Designator: MS5N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12.2 nS
Cossⓘ - Output Capacitance: 86 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO-220
MS5N60 substitution
- MOSFET ⓘ Cross-Reference Search
MS5N60 datasheet
ms5n60.pdf
MS5N60 N-Channel Enhancement Mode Power MOSFET Description The MS5N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features BVDSS=650V typically @ Tj=150 ... See More ⇒
Detailed specifications: MS48P25, MS49P63, MS4N60, MS4N60C, MS4N65, MS50N06, MS5N50, MS5N50-A, AO3407, MS60P02NE, MS69N68, MS6N40, MS6N80, MS6N90, MS6N95, MS70N03, MS74N52
Keywords - MS5N60 MOSFET specs
MS5N60 cross reference
MS5N60 equivalent finder
MS5N60 pdf lookup
MS5N60 substitution
MS5N60 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: AOTF2918L | WMS06N15T2 | JMPL1050AP | PDS6904 | LSH65R280HT
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