All MOSFET. MS60P02NE Datasheet

 

MS60P02NE Datasheet and Replacement


   Type Designator: MS60P02NE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.77 Ohm
   Package: SOT-23
 

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MS60P02NE Datasheet (PDF)

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MS60P02NE

Bruckewell Technology Corp., Ltd. MS60P02NE P-Channel 60V (D-S) MOSFET General Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, pri

Datasheet: MS49P63 , MS4N60 , MS4N60C , MS4N65 , MS50N06 , MS5N50 , MS5N50-A , MS5N60 , 75N75 , MS69N68 , MS6N40 , MS6N80 , MS6N90 , MS6N95 , MS70N03 , MS74N52 , MS74N62 .

History: MSK19N03 | STP8N120K5 | LP2301BLT1G | R6007ENJ | MSK2N60T | SI7129DN | PTP01N04N

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