All MOSFET. MS60P02NE Datasheet

 

MS60P02NE Datasheet and Replacement


   Type Designator: MS60P02NE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.77 Ohm
   Package: SOT-23
 

 MS60P02NE substitution

   - MOSFET ⓘ Cross-Reference Search

 

MS60P02NE Datasheet (PDF)

 ..1. Size:134K  bruckewell
 ms60p02ne.pdf pdf_icon

MS60P02NE

Bruckewell Technology Corp., Ltd. MS60P02NE P-Channel 60V (D-S) MOSFET General Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, pri

Datasheet: MS49P63 , MS4N60 , MS4N60C , MS4N65 , MS50N06 , MS5N50 , MS5N50-A , MS5N60 , 18N50 , MS69N68 , MS6N40 , MS6N80 , MS6N90 , MS6N95 , MS70N03 , MS74N52 , MS74N62 .

History: IPAN80R360P7 | SRC60R100B | CRJD390N65GC

Keywords - MS60P02NE MOSFET datasheet

 MS60P02NE cross reference
 MS60P02NE equivalent finder
 MS60P02NE lookup
 MS60P02NE substitution
 MS60P02NE replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
Back to Top

 


 
.