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MS60P02NE Specs and Replacement

Type Designator: MS60P02NE

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.77 Ohm

Package: SOT-23

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MS60P02NE datasheet

 ..1. Size:134K  bruckewell
 ms60p02ne.pdf pdf_icon

MS60P02NE

Bruckewell Technology Corp., Ltd. MS60P02NE P-Channel 60V (D-S) MOSFET General Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, pri... See More ⇒

Detailed specifications: MS49P63, MS4N60, MS4N60C, MS4N65, MS50N06, MS5N50, MS5N50-A, MS5N60, 18N50, MS69N68, MS6N40, MS6N80, MS6N90, MS6N95, MS70N03, MS74N52, MS74N62

Keywords - MS60P02NE MOSFET specs

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