All MOSFET. MS69N68 Datasheet

 

MS69N68 Datasheet and Replacement


   Type Designator: MS69N68
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 6.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 72 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TSSOP-8
 

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MS69N68 Datasheet (PDF)

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MS69N68

MS69N68Dual N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARYrDS(on) (m)VDS (V) ID(A)Key Features: 22 @ VGS = 4.5V6.8 Low r trench technology DS(on)20 30 @ VGS = 2.5V5.8 Low thermal impedance 46 @ VGS = 1.8V4.7 Fast switching speed Typical Applications: Battery Powered Instruments Portable Computing Mobile Phones GPS Units and Media P

Datasheet: MS4N60 , MS4N60C , MS4N65 , MS50N06 , MS5N50 , MS5N50-A , MS5N60 , MS60P02NE , 2N60 , MS6N40 , MS6N80 , MS6N90 , MS6N95 , MS70N03 , MS74N52 , MS74N62 , MS75N075 .

History: SSF3960J7-HF | NTMFS5C410NT3G | SRADM1003 | ME4410AD | SML3525BN | NTHS5441PT1G

Keywords - MS69N68 MOSFET datasheet

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