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MS69N68 Specs and Replacement

Type Designator: MS69N68

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 6.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 72 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TSSOP-8

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MS69N68 datasheet

 ..1. Size:348K  bruckewell
 ms69n68.pdf pdf_icon

MS69N68

MS69N68 Dual N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY rDS(on) (m ) VDS (V) ID(A) Key Features 22 @ VGS = 4.5V 6.8 Low r trench technology DS(on) 20 30 @ VGS = 2.5V 5.8 Low thermal impedance 46 @ VGS = 1.8V 4.7 Fast switching speed Typical Applications Battery Powered Instruments Portable Computing Mobile Phones GPS Units and Media P... See More ⇒

Detailed specifications: MS4N60, MS4N60C, MS4N65, MS50N06, MS5N50, MS5N50-A, MS5N60, MS60P02NE, 20N50, MS6N40, MS6N80, MS6N90, MS6N95, MS70N03, MS74N52, MS74N62, MS75N075

Keywords - MS69N68 MOSFET specs

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