All MOSFET. MS6N40 Datasheet

 

MS6N40 Datasheet and Replacement


   Type Designator: MS6N40
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 5.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-220
      - MOSFET Cross-Reference Search

 

MS6N40 Datasheet (PDF)

 ..1. Size:847K  bruckewell
 ms6n40.pdf pdf_icon

MS6N40

MS6N40 N-Channel Enhancement Mode Power MOSFET Description The MS6N40 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features BVDSS=650V typically @ Tj=150

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IXFH52N50P2 | LKK47-06C5 | TSM4424CS | CTD06N7P5 | HM4611A | IRFB3004GPBF | BRCS200P03DP

Keywords - MS6N40 MOSFET datasheet

 MS6N40 cross reference
 MS6N40 equivalent finder
 MS6N40 lookup
 MS6N40 substitution
 MS6N40 replacement

 

 
Back to Top

 


 
.