MS6N40 Specs and Replacement
Type Designator: MS6N40
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 95 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO-220
MS6N40 substitution
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MS6N40 datasheet
ms6n40.pdf
MS6N40 N-Channel Enhancement Mode Power MOSFET Description The MS6N40 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features BVDSS=650V typically @ Tj=150 ... See More ⇒
Detailed specifications: MS4N60C, MS4N65, MS50N06, MS5N50, MS5N50-A, MS5N60, MS60P02NE, MS69N68, IRF520, MS6N80, MS6N90, MS6N95, MS70N03, MS74N52, MS74N62, MS75N075, MS75N75
Keywords - MS6N40 MOSFET specs
MS6N40 cross reference
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MS6N40 replacement
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History: EMH2418R
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