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MS6N80 Specs and Replacement

Type Designator: MS6N80

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 145 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm

Package: TO-220

MS6N80 substitution

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MS6N80 datasheet

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 ms6n80.pdf pdf_icon

MS6N80

MS6N80 800V N-Channel MOSFET Description The MS6N80 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Intrinsic C... See More ⇒

Detailed specifications: MS4N65, MS50N06, MS5N50, MS5N50-A, MS5N60, MS60P02NE, MS69N68, MS6N40, IRF2807, MS6N90, MS6N95, MS70N03, MS74N52, MS74N62, MS75N075, MS75N75, MS7N60

Keywords - MS6N80 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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