All MOSFET. MS6N80 Datasheet

 

MS6N80 Datasheet and Replacement


   Type Designator: MS6N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
   Package: TO-220
 

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MS6N80 Datasheet (PDF)

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MS6N80

MS6N80 800V N-Channel MOSFET Description The MS6N80 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Intrinsic C

Datasheet: MS4N65 , MS50N06 , MS5N50 , MS5N50-A , MS5N60 , MS60P02NE , MS69N68 , MS6N40 , IRFB31N20D , MS6N90 , MS6N95 , MS70N03 , MS74N52 , MS74N62 , MS75N075 , MS75N75 , MS7N60 .

History: FQB12N60TMAM002 | IRLR3915PBF | EV3404 | SM2305PSA | FHF4N60A | SIHF22N65E | HRD80N06K

Keywords - MS6N80 MOSFET datasheet

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