MS6N90 MOSFET Datasheet: N-Ch, 800V, 6A. Full specification with pinout and replacement list

MS6N90 Specs and Replacement

Type Designator: MS6N90

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 165 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm

Package: TO-220

MS6N90 substitution

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MS6N90 datasheet

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MS6N90 900V N-Channel MOSFET Description The MS6N90 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features RDS(on) (Max 2.4 )@VGS=10V Gate Charge (... See More ⇒

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MS6N95 950V N-Channel MOSFET Description The MS6N95 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features RDS(on) (Max 2.4 )@VGS=10V Gate Charge ... See More ⇒

Detailed specifications: MS50N06, MS5N50, MS5N50-A, MS5N60, MS60P02NE, MS69N68, MS6N40, MS6N80, STF13NM60N, MS6N95, MS70N03, MS74N52, MS74N62, MS75N075, MS75N75, MS7N60, MS7N80