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MS70N03 Specs and Replacement

Type Designator: MS70N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 323 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO-252

MS70N03 substitution

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MS70N03 datasheet

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ms70n03.pdf pdf_icon

MS70N03

MS70N03 N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 6 @ VGS = 10V 75 Low thermal impedance 30 8 @ VGS = 4.5V 65 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLE... See More ⇒

Detailed specifications: MS5N50-A, MS5N60, MS60P02NE, MS69N68, MS6N40, MS6N80, MS6N90, MS6N95, 2N60, MS74N52, MS74N62, MS75N075, MS75N75, MS7N60, MS7N80, MS85N06, MS8N50

Keywords - MS70N03 MOSFET specs

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