MS70N03 Specs and Replacement
Type Designator: MS70N03
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 323 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO-252
MS70N03 substitution
- MOSFET ⓘ Cross-Reference Search
MS70N03 datasheet
ms70n03.pdf
MS70N03 N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 6 @ VGS = 10V 75 Low thermal impedance 30 8 @ VGS = 4.5V 65 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLE... See More ⇒
Detailed specifications: MS5N50-A, MS5N60, MS60P02NE, MS69N68, MS6N40, MS6N80, MS6N90, MS6N95, 2N60, MS74N52, MS74N62, MS75N075, MS75N75, MS7N60, MS7N80, MS85N06, MS8N50
Keywords - MS70N03 MOSFET specs
MS70N03 cross reference
MS70N03 equivalent finder
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MS70N03 substitution
MS70N03 replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: NTD4813NH-1G
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