MS70N03 Datasheet and Replacement
Type Designator: MS70N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 20 nC
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 323 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO-252
MS70N03 substitution
MS70N03 Datasheet (PDF)
ms70n03.pdf

MS70N03N-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technologyDS(on)6 @ VGS = 10V75 Low thermal impedance308 @ VGS = 4.5V65 Fast switching speedTypical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion CircuitsABSOLUTE MAXIMUM RATINGS (TA = 25C UNLE
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