MS7N60 MOSFET Datasheet: N-Ch, 600V, 7A. Full specification with pinout and replacement list

MS7N60 Specs and Replacement

Type Designator: MS7N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 114 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO-220

MS7N60 substitution

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MS7N60 datasheet

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MS7N60 N-Channel Enhancement Mode Power MOSFET Description The MS7N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple... See More ⇒

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N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 600 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 7 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial powe... See More ⇒

Detailed specifications: MS6N80, MS6N90, MS6N95, MS70N03, MS74N52, MS74N62, MS75N075, MS75N75, IRFB31N20D, MS7N80, MS85N06, MS8N50, MS8N60, MS99N45, MS9N20E, MS9N90, MSA4P21