All MOSFET. MS7N60 Datasheet

 

MS7N60 Datasheet and Replacement


   Type Designator: MS7N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 37 nC
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 114 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-220
 

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MS7N60 Datasheet (PDF)

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MS7N60

MS7N60 N-Channel Enhancement Mode Power MOSFET Description The MS7N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple

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MS7N60

N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 600 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 7 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial powe

Datasheet: MS6N80 , MS6N90 , MS6N95 , MS70N03 , MS74N52 , MS74N62 , MS75N075 , MS75N75 , IRF730 , MS7N80 , MS85N06 , MS8N50 , MS8N60 , MS99N45 , MS9N20E , MS9N90 , MSA4P21 .

History: HMS85N95D

Keywords - MS7N60 MOSFET datasheet

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