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MS7N80 Specs and Replacement

Type Designator: MS7N80

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 57 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 155 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm

Package: TO-220

MS7N80 substitution

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MS7N80 datasheet

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 ms7n80.pdf pdf_icon

MS7N80

MS7N80 800V N-Channel MOSFET Description The MS7N80 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Intrinsic C... See More ⇒

Detailed specifications: MS6N90, MS6N95, MS70N03, MS74N52, MS74N62, MS75N075, MS75N75, MS7N60, STP65NF06, MS85N06, MS8N50, MS8N60, MS99N45, MS9N20E, MS9N90, MSA4P21, MSAER12N50A

Keywords - MS7N80 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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