All MOSFET. MS7N80 Datasheet

 

MS7N80 Datasheet and Replacement


   Type Designator: MS7N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 57 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 155 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
   Package: TO-220
 

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MS7N80 Datasheet (PDF)

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MS7N80

MS7N80 800V N-Channel MOSFET Description The MS7N80 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Intrinsic C

Datasheet: MS6N90 , MS6N95 , MS70N03 , MS74N52 , MS74N62 , MS75N075 , MS75N75 , MS7N60 , IRFZ48N , MS85N06 , MS8N50 , MS8N60 , MS99N45 , MS9N20E , MS9N90 , MSA4P21 , MSAER12N50A .

History: MCAC10H03 | STB16N65M5 | SST108 | 10N50TF | FHU100N03C | AUIRLR3110Z | SIHF640L

Keywords - MS7N80 MOSFET datasheet

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