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MS8N50 Specs and Replacement

Type Designator: MS8N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 310 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO-220

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MS8N50 datasheet

 ..1. Size:384K  bruckewell
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MS8N50

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 0.1. Size:930K  cn hmsemi
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MS8N50

HMS8N50K/HMS8N50I HMS8N50K/HMS8N50I 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using H&M Semi s - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 25nC) This advanced technology has been especially tailored - High ruggedness to minimize conduction loss, provide superior switching - Fast swi... See More ⇒

Detailed specifications: MS70N03, MS74N52, MS74N62, MS75N075, MS75N75, MS7N60, MS7N80, MS85N06, 7N60, MS8N60, MS99N45, MS9N20E, MS9N90, MSA4P21, MSAER12N50A, MSAER30N20A, MSAER38N10A

Keywords - MS8N50 MOSFET specs

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