All MOSFET. MS8N50 Datasheet

 

MS8N50 Datasheet and Replacement


   Type Designator: MS8N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO-220
 

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MS8N50 Datasheet (PDF)

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MS8N50

MS8N50 N-Channel Enhancement Mode Power MOSFET Description The MS8N50 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features BVDSS=550V typically @ Tj=150

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MS8N50

HMS8N50K/HMS8N50IHMS8N50K/HMS8N50I500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using H&M Semis - 7.6A, 500V, RDS(on) typ. = 0.5@VGS = 10 VAdvanced Super-Junction technology. - Low gate charge ( typical 25nC)This advanced technology has been especially tailored - High ruggednessto minimize conduction loss, provide superior switching - Fast swi

Datasheet: MS70N03 , MS74N52 , MS74N62 , MS75N075 , MS75N75 , MS7N60 , MS7N80 , MS85N06 , MMIS60R580P , MS8N60 , MS99N45 , MS9N20E , MS9N90 , MSA4P21 , MSAER12N50A , MSAER30N20A , MSAER38N10A .

History: BUK637-500B | 12P10G-TMS-T

Keywords - MS8N50 MOSFET datasheet

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