MS99N45 Specs and Replacement
Type Designator: MS99N45
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 40 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.089 Ohm
Package: SO-8
MS99N45 substitution
- MOSFET ⓘ Cross-Reference Search
MS99N45 datasheet
ms99n45.pdf
MS99N45 N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 89 @ VGS = 10V 3.6 Low thermal impedance 60 104 @ VGS = 4.5V 3.4 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RATINGS (TA =... See More ⇒
Detailed specifications: MS74N62, MS75N075, MS75N75, MS7N60, MS7N80, MS85N06, MS8N50, MS8N60, IRFZ46N, MS9N20E, MS9N90, MSA4P21, MSAER12N50A, MSAER30N20A, MSAER38N10A, MSAER57N10A, MSAEZ50N10A
Keywords - MS99N45 MOSFET specs
MS99N45 cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: BUK752R7-60E | IRFI530NPBF
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