All MOSFET. MS99N45 Datasheet

 

MS99N45 Datasheet and Replacement


   Type Designator: MS99N45
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.089 Ohm
   Package: SO-8
 

 MS99N45 substitution

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MS99N45 Datasheet (PDF)

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MS99N45

MS99N45N-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)89 @ VGS = 10V3.6 Low thermal impedance 60104 @ VGS = 4.5V3.4 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RATINGS (TA =

Datasheet: MS74N62 , MS75N075 , MS75N75 , MS7N60 , MS7N80 , MS85N06 , MS8N50 , MS8N60 , STP65NF06 , MS9N20E , MS9N90 , MSA4P21 , MSAER12N50A , MSAER30N20A , MSAER38N10A , MSAER57N10A , MSAEZ50N10A .

History: WMB042DN03LG2 | KP8M6 | SM1A22NSFP | PK6D0BA | DMZ6005E | NTMFS5C609NLT1G | PSMN7R5-30YLD

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