All MOSFET. MS9N90 Datasheet

 

MS9N90 Datasheet and Replacement


   Type Designator: MS9N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 280 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-220
 

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MS9N90 Datasheet (PDF)

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MS9N90

MS9N90 900V N-Channel MOSFET Description The MS9N90 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features RDS(on) (Max 1.4 )@VGS=10V Gate Charge (

Datasheet: MS75N75 , MS7N60 , MS7N80 , MS85N06 , MS8N50 , MS8N60 , MS99N45 , MS9N20E , 60N06 , MSA4P21 , MSAER12N50A , MSAER30N20A , MSAER38N10A , MSAER57N10A , MSAEZ50N10A , MSAFR12N50A , MSAFR30N20A .

History: NCEP01T13 | NTMFS5C609NLT1G | IPP80P04P4-07 | NP90N04VDK | KP8M6 | PSMN7R5-30YLD | DMZ6005E

Keywords - MS9N90 MOSFET datasheet

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