All MOSFET. MSAEZ50N10A Datasheet

 

MSAEZ50N10A Datasheet and Replacement


   Type Designator: MSAEZ50N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 730 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO-276AB
 

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MSAEZ50N10A Datasheet (PDF)

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MSAEZ50N10A

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220 MSAEZ50N10AFAX: (714) 966-5256MSAFZ50N10AFeatures100 Volts Ultrafast rectifier in parallel with the body diode (MSAE type only)50 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability35 m Hermetically sealed, surface mount power package Low pa

Datasheet: MS99N45 , MS9N20E , MS9N90 , MSA4P21 , MSAER12N50A , MSAER30N20A , MSAER38N10A , MSAER57N10A , MMD60R360PRH , MSAFR12N50A , MSAFR30N20A , MSAFR38N10A , MSAFX10N90A , MSAFX11P50A , MSAFX20N60A , MSAFX75N10A , MSAFZ50N10A .

History: 3N60F | SI7448DP

Keywords - MSAEZ50N10A MOSFET datasheet

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