All MOSFET. MSB15N60 Datasheet

 

MSB15N60 Datasheet and Replacement


   Type Designator: MSB15N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 245 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 78 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
   Package: TO-263
 

 MSB15N60 substitution

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MSB15N60 Datasheet (PDF)

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MSB15N60

Preliminary_MSB15N60 N-Channel Enhancement Mode Power MOSFET Description The MSB15N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-263 package is universally preferred for all commercial-industrial applications Features Low On Resista

Datasheet: MSAFR12N50A , MSAFR30N20A , MSAFR38N10A , MSAFX10N90A , MSAFX11P50A , MSAFX20N60A , MSAFX75N10A , MSAFZ50N10A , IRF3205 , MSB22A04Q8 , MSB55N03N3 , MSC22N03 , MSC37N03 , MTC1421G6 , MTC4503LQ8 , MTC5806V8 , MTD10N10ELT4 .

History: AM2314N | SRH03P098LMTR-G | TK10A55D | 2SK2928 | SIR882ADP | IRHYS67130CM

Keywords - MSB15N60 MOSFET datasheet

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