MSB15N60 Specs and Replacement
Type Designator: MSB15N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 245 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 78 nS
Cossⓘ - Output Capacitance: 300 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
Package: TO-263
MSB15N60 substitution
- MOSFET ⓘ Cross-Reference Search
MSB15N60 datasheet
msb15n60.pdf
Preliminary_MSB15N60 N-Channel Enhancement Mode Power MOSFET Description The MSB15N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-263 package is universally preferred for all commercial-industrial applications Features Low On Resista... See More ⇒
Detailed specifications: MSAFR12N50A, MSAFR30N20A, MSAFR38N10A, MSAFX10N90A, MSAFX11P50A, MSAFX20N60A, MSAFX75N10A, MSAFZ50N10A, IRF3205, MSB22A04Q8, MSB55N03N3, MSC22N03, MSC37N03, MTC1421G6, MTC4503LQ8, MTC5806V8, MTD10N10ELT4
Keywords - MSB15N60 MOSFET specs
MSB15N60 cross reference
MSB15N60 equivalent finder
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MSB15N60 substitution
MSB15N60 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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