MSB22A04Q8 Datasheet and Replacement
Type Designator: MSB22A04Q8
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 9.5 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: SOP-8
MSB22A04Q8 substitution
MSB22A04Q8 Datasheet (PDF)
msb22a04q8.pdf

Bruckewell Technology Corp., Ltd. http://www.bruckewell.com/semicon Product Specification Dual N-Channel Logic Level Enhancement Mode Power MOSFET MSB22A04Q8 Description The MSB22A04Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all comme
Datasheet: MSAFR30N20A , MSAFR38N10A , MSAFX10N90A , MSAFX11P50A , MSAFX20N60A , MSAFX75N10A , MSAFZ50N10A , MSB15N60 , IRF740 , MSB55N03N3 , MSC22N03 , MSC37N03 , MTC1421G6 , MTC4503LQ8 , MTC5806V8 , MTD10N10ELT4 , MTD120C10J4 .
History: WSP4805 | TPC8025 | GSM3481S | FKI07076 | WMO08N70EM | STP200N6F3 | NTA4001NT1
Keywords - MSB22A04Q8 MOSFET datasheet
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History: WSP4805 | TPC8025 | GSM3481S | FKI07076 | WMO08N70EM | STP200N6F3 | NTA4001NT1



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