MSB22A04Q8 PDF and Equivalents Search

 

MSB22A04Q8 Specs and Replacement

Type Designator: MSB22A04Q8

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.5 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: SOP-8

MSB22A04Q8 substitution

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MSB22A04Q8 datasheet

 ..1. Size:1344K  bruckewell
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MSB22A04Q8

Bruckewell Technology Corp., Ltd. http //www.bruckewell.com/semicon Product Specification Dual N-Channel Logic Level Enhancement Mode Power MOSFET MSB22A04Q8 Description The MSB22A04Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all comme... See More ⇒

Detailed specifications: MSAFR30N20A, MSAFR38N10A, MSAFX10N90A, MSAFX11P50A, MSAFX20N60A, MSAFX75N10A, MSAFZ50N10A, MSB15N60, IRF740, MSB55N03N3, MSC22N03, MSC37N03, MTC1421G6, MTC4503LQ8, MTC5806V8, MTD10N10ELT4, MTD120C10J4

Keywords - MSB22A04Q8 MOSFET specs

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