All MOSFET. MSB55N03N3 Datasheet

 

MSB55N03N3 Datasheet and Replacement


   Type Designator: MSB55N03N3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 2.5 nS
   Cossⓘ - Output Capacitance: 66 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: SOT-23
 

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MSB55N03N3 Datasheet (PDF)

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MSB55N03N3

Bruckewell Technology Corp., Ltd. http://www.bruckewell.com/semicon 30V N-Channel Logic Level Enhancement Mode MOSFET Product Specification MSB55N03N3 FEATURES: VDS=30V RDS(ON)=55m@VGS=10V, ID=3.5A BVDSS : 30V RDS(ON)=85m@VGS=4.5V, ID=2A RDS(ON) : 55m(typ.) Lower gate charge ID : 3.5A Pb-free lead plating and Halogen-free package Bruckewell Tech

Datasheet: MSAFR38N10A , MSAFX10N90A , MSAFX11P50A , MSAFX20N60A , MSAFX75N10A , MSAFZ50N10A , MSB15N60 , MSB22A04Q8 , IRF840 , MSC22N03 , MSC37N03 , MTC1421G6 , MTC4503LQ8 , MTC5806V8 , MTD10N10ELT4 , MTD120C10J4 , MTD20P03HDLT4 .

History: STB120N10F4 | SSM95T07GP | SFS08R08DF | TPC8045-H | 2N4343 | TK100A08N1 | WM06N30MS

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