All MOSFET. MTC1421G6 Datasheet

 

MTC1421G6 Datasheet and Replacement


   Type Designator: MTC1421G6
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 0.96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 16.6 nS
   Cossⓘ - Output Capacitance: 27 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: TSOP-6
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MTC1421G6 Datasheet (PDF)

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MTC1421G6

Spec. No. : C832G6 Issued Date : 2012.09.11 CYStech Electronics Corp.Revised Date : 2014.10.24 Page No. : 1/13 N- AND P-Channel Enhancement Mode MOSFET N-CH (Q1) P-CH (Q2) MTC1421G6 BVDSS 20V -20VID 2A(VGS=4.5V) -1.5A(VGS=-4.5V) 73m(VGS=4.5V) 170m(VGS=-4.5V)RDSON(TYP.) 92m(VGS=2.5V) 224m(VGS=-2.5V)147m(VGS=1.8V) 340m(VGS=-1.8V)Features Simple drive

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: 15N10G-TM3-T | NCE60NP2012K | AP3P7R0EMT | VTI640F | TPA70R450C | ISCNH375W | IRF7805PBF-1

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