MTC1421G6 Specs and Replacement
Type Designator: MTC1421G6
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16.6 nS
Cossⓘ - Output Capacitance: 27 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
Package: TSOP-6
MTC1421G6 substitution
- MOSFET ⓘ Cross-Reference Search
MTC1421G6 datasheet
mtc1421g6.pdf
Spec. No. C832G6 Issued Date 2012.09.11 CYStech Electronics Corp. Revised Date 2014.10.24 Page No. 1/13 N- AND P-Channel Enhancement Mode MOSFET N-CH (Q1) P-CH (Q2) MTC1421G6 BVDSS 20V -20V ID 2A(VGS=4.5V) -1.5A(VGS=-4.5V) 73m (VGS=4.5V) 170m (VGS=-4.5V) RDSON(TYP.) 92m (VGS=2.5V) 224m (VGS=-2.5V) 147m (VGS=1.8V) 340m (VGS=-1.8V) Features Simple drive ... See More ⇒
Detailed specifications: MSAFX20N60A, MSAFX75N10A, MSAFZ50N10A, MSB15N60, MSB22A04Q8, MSB55N03N3, MSC22N03, MSC37N03, IRF540, MTC4503LQ8, MTC5806V8, MTD10N10ELT4, MTD120C10J4, MTD20P03HDLT4, MTD20P06HDLT4, MTD2955VT4, MTD5P06VT4
Keywords - MTC1421G6 MOSFET specs
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