MTD10N10ELT4 MOSFET Datasheet: N-Ch, 100V, 10A. Full specification with pinout and replacement list

MTD10N10ELT4 Specs and Replacement

Type Designator: MTD10N10ELT4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 74 nS

Cossⓘ - Output Capacitance: 175 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm

Package: DPAK

MTD10N10ELT4 substitution

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MTD10N10ELT4 datasheet

..1. Size:78K onsemi
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MTD10N10EL TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate http //onsemi.com This advanced TMOS E-FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient VDSS RDS(ON) TYP ID MAX design also offers a drain-to-source diode with a fast recovery time. 100 V Designed for low volta... See More ⇒

5.1. Size:252K motorola
mtd10n10e.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD10N10EL/D Designer's Data Sheet MTD10N10EL TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 10 AMPERES 100 VOLTS This advanced TMOS E FET is designed to withstand high RDS(on) = 0.22 OHM energy in the avalanch... See More ⇒

Detailed specifications: MSB15N60, MSB22A04Q8, MSB55N03N3, MSC22N03, MSC37N03, MTC1421G6, MTC4503LQ8, MTC5806V8, IRFZ44, MTD120C10J4, MTD20P03HDLT4, MTD20P06HDLT4, MTD2955VT4, MTD5P06VT4, MTD5P06VT4G, MTD6N15T4, MTD6N15T4G