All MOSFET. MTD10N10ELT4 Datasheet

 

MTD10N10ELT4 Datasheet and Replacement


   Type Designator: MTD10N10ELT4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 74 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
   Package: DPAK
 

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MTD10N10ELT4 Datasheet (PDF)

 ..1. Size:78K  onsemi
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MTD10N10ELT4

MTD10N10ELTMOS E-FETPower Field Effect TransistorDPAK for Surface MountN-Channel Enhancement-Mode SiliconGatehttp://onsemi.comThis advanced TMOS E-FET is designed to withstand high energyin the avalanche and commutation modes. The new energy efficientVDSS RDS(ON) TYP ID MAXdesign also offers a drain-to-source diode with a fast recovery time.100 VDesigned for low volta

 5.1. Size:252K  motorola
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MTD10N10ELT4

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD10N10EL/DDesigner's Data SheetMTD10N10ELTMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 10 AMPERES100 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.22 OHMenergy in the avalanch

Datasheet: MSB15N60 , MSB22A04Q8 , MSB55N03N3 , MSC22N03 , MSC37N03 , MTC1421G6 , MTC4503LQ8 , MTC5806V8 , IRF640 , MTD120C10J4 , MTD20P03HDLT4 , MTD20P06HDLT4 , MTD2955VT4 , MTD5P06VT4 , MTD5P06VT4G , MTD6N15T4 , MTD6N15T4G .

History: SIR892DP

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