MTD5P06VT4G
MOSFET. Datasheet pdf. Equivalent
Type Designator: MTD5P06VT4G
Marking Code: 5P06V
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 40
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 5
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 12
nC
trⓘ - Rise Time: 26
nS
Cossⓘ -
Output Capacitance: 140
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45
Ohm
Package:
DPAK
MTD5P06VT4G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTD5P06VT4G
Datasheet (PDF)
..1. Size:75K onsemi
mtd5p06v-d mtd5p06vt4 mtd5p06vt4g.pdf
MTD5P06VPreferred DevicePower MOSFET5 Amps, 60 Volts P-Channel DPAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. Designed for low voltage, highspeed switching applications in power supplies, converters and powerhttp://onsemi.commotor controls, these devices are particularly well suited for bridgecircuits where diode speed and com
..2. Size:828K cn vbsemi
mtd5p06vt4g.pdf
MTD5P06VT4Gwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter S
6.1. Size:245K motorola
mtd5p06vrev1a.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD5P06V/DDesigner's Data SheetMTD5P06VTMOS V.Motorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 5 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.450 OHMtance area product about o
6.2. Size:212K motorola
mtd5p06v.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD5P06V/DDesigner's Data SheetMTD5P06VTMOS V.Motorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 5 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.450 OHMtance area product about o
7.1. Size:208K motorola
mtd5p06erev1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD5P06E/DDesigner's Data SheetMTD5P06ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 5.0 AMPERES 60 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.55 OHMenergy in the avalanche a
7.2. Size:183K motorola
mtd5p06e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD5P06E/DDesigner's Data SheetMTD5P06ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 5.0 AMPERES 60 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.55 OHMenergy in the avalanche a
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.