MTD5P06VT4G MOSFET. Datasheet pdf. Equivalent
Type Designator: MTD5P06VT4G
Marking Code: 5P06V
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 12 nC
trⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 140 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: DPAK
MTD5P06VT4G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTD5P06VT4G Datasheet (PDF)
mtd5p06v-d mtd5p06vt4 mtd5p06vt4g.pdf
MTD5P06VPreferred DevicePower MOSFET5 Amps, 60 Volts P-Channel DPAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. Designed for low voltage, highspeed switching applications in power supplies, converters and powerhttp://onsemi.commotor controls, these devices are particularly well suited for bridgecircuits where diode speed and com
mtd5p06vt4g.pdf
MTD5P06VT4Gwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter S
mtd5p06vrev1a.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD5P06V/DDesigner's Data SheetMTD5P06VTMOS V.Motorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 5 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.450 OHMtance area product about o
mtd5p06v.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD5P06V/DDesigner's Data SheetMTD5P06VTMOS V.Motorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 5 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.450 OHMtance area product about o
mtd5p06erev1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD5P06E/DDesigner's Data SheetMTD5P06ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 5.0 AMPERES 60 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.55 OHMenergy in the avalanche a
mtd5p06e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD5P06E/DDesigner's Data SheetMTD5P06ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 5.0 AMPERES 60 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.55 OHMenergy in the avalanche a
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
